Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

10A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Number of Elements  

1

Power Dissipation (Max)  

24W Tc

Turn Off Delay Time  

20 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2001

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

110MOhm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

60V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

13.6A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

24W

Case Connection  

ISOLATED

Turn On Delay Time  

8 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

110m Ω @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

6.4nC @ 5V

Rise Time  

90ns

Vgs (Max)  

±20V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

10A

Threshold Voltage  

2.5V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

40A

Avalanche Energy Rating (Eas)  

90 mJ

Height  

9.19mm

Length  

10.16mm

Width  

4.7mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free